The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Sub-100 nm Channel Length Graphene Transistors
Open accessAbstract
Here we report high-performance sub-100 nm channel length graphene transistors fabricated using a self-aligned approach. The graphene transistors are fabricated using a highly doped GaN nanowire as the local gate with the source and drain electrodes defined through a self-aligned process and the channel length defined by the nanowire size. This fabrication approach allows the preservation of the high carrier mobility in graphene and ensures nearly perfect alignment between source, drain, and gate electrodes. It therefore affords transistor performance not previously possible. Graphene transistors with 45-100 nm channel lengths have been fabricated with the scaled transconductance exceeding 2 mS/μm, comparable to the best performed high electron mobility transistors with similar channel lengths. Analysis of and the device characteristics gives a transit time of 120-220 fs and the projected intrinsic cutoff frequency (f(T)) reaching 700-1400 GHz. This study demonstrates the exciting potential of graphene based electronics in terahertz electronics.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
High-field electrical transport in single-wall carbon nanotubes
Yao, Z., Kane, C. L., & Dekker, C. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.2941 · Cited by 1,501
Coulomb Oscillations and Hall Effect in Quasi-2D Graphite Quantum Dots
Bunch, J. S., Yaish, Y., Brink, M., Bolotin, K., & McEuen, P. L. (2005) · Nano Letters · doi:10.1021/nl048111+ · Cited by 312
Cited by
Novoselov, K. S., Fal′ko, V. I., Colombo, L., Gellert, P. R., Schwab, M. G., & Kim, K. (2012) · Nature · doi:10.1038/nature11458 · Cited by 9,251
Van der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Self-citationSensing Behavior of Atomically Thin-Layered MoS2 Transistors
Late, D. J., Huang, Y.-K., Liu, B., Acharya, J., Shirodkar, S. N., Luo, J., Yan, A., Charles, D., Waghmare, U. V., Dravid, V. P., et al. (2013) · ACS Nano · doi:10.1021/nn400026u · Cited by 1,374
Self-citationPromises and prospects of two-dimensional transistors
Liu, Y., Duan, X., Shin, H.-J., Park, S., Huang, Y., & Duan, X. (2021) · Nature · doi:10.1038/s41586-021-03339-z · Cited by 1,356
Self-citationPlasmon resonance enhanced multicolour photodetection by graphene
Liu, Y., Cheng, R., Liao, L., Zhou, H., Bai, J., Liu, G., Liu, L., Huang, Y., & Duan, X. (2011) · Nature Communications · doi:10.1038/ncomms1589 · Cited by 745
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Metadata
- Authors
- Liao, L., Bai, J., Cheng, R., Lin, Y.-C., Jiang, S., Qu, Y., Huang, Y., & Duan, X.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-09-03
- Volume
- 10
- Issue
- 10
- Pages
- 3952-3956
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2157549755
- Cited by
- 170
- References
- 3
- FWCI
- 8.80
- Type
- journal article
- Language
- en
- Open access
- green
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