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Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Abstract
Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoindentation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.
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Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition
Kim, K. K., Hsu, A., Jia, X., Kim, S. M., Shi, Y., Hofmann, M., Nezich, D., Rodriguez-Nieva, J. F., Dresselhaus, M., Palacios, T., et al. (2012) · Nano Letters · doi:10.1021/nl203249a · Cited by 1,256
Graphene and boron nitride lateral heterostructures for atomically thin circuitry
Levendorf, M. P., Kim, C.-J., Brown, L., Huang, P. Y., Havener, R. W., Muller, D. A., & Park, J. (2012) · Nature · doi:10.1038/nature11408 · Cited by 855
Huang, X., Sheng, P., Tu, Z., Zhang, F., Wang, J., Geng, H., Zou, Y., Di, C.-A., Yi, Y., Sun, Y., et al. (2015) · Nature Communications · doi:10.1038/ncomms8408 · Cited by 855
Interface-Assisted Synthesis of 2D Materials: Trend and Challenges
Dong, R., Zhang, T., & Feng, X. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00056 · Cited by 710
Metadata
- Authors
- Song, L., Ci, L., Lu, H., Sorokin, P. B., Jin, C., Ni, J., Kvashnin, A. G., Kvashnin, D. G., Lou, J., Yakobson, B. I., & Ajayan, P. M.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-07-22
- Volume
- 10
- Issue
- 8
- Pages
- 3209-3215
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1981053966
- Cited by
- 2,689
- References
- 0
- FWCI
- 41.55
- Type
- journal article
- Language
- en
- Open access
- closed
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- Song, L., Ci, L., Lu, H., Sorokin, P. B., Jin, C., Ni, J., Kvashnin, A. G., Kvashnin, D. G., Lou, J., Yakobson, B. I., & Ajayan, P. M. (2010). Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers. Nano Letters. https://doi.org/10.1021/nl1022139
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