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Cited by 158

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering

Chiu, Hsin-Ying, Perebeinos, Vasili, Lin, Yu-Ming, Avouris, Phaedon·2010·Nano Letters

Abstract

We investigate electric transport in graphene on SiO2 in the high field limit and report on the formation of p-n junctions. Previously, doping of graphene has been achieved by using multiple electrostatic gates, or charge transfer from adsorbants. Here we demonstrate a novel approach to create p-n junctions by changing the local electrostatic potential in the vicinity of one of the contacts without the use of extra gates. The approach is based on the electronic modification not of the graphene but of the substrate and produces a well-behaved, sharp junction whose position and height can be controlled.

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Metadata

Authors
Chiu, H.-Y., Perebeinos, V., Lin, Y.-M., & Avouris, P.
Venue
Nano Letters
Published
2010-10-01
Volume
10
Issue
11
Pages
4634-4639
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2149953478
Cited by
158
References
2
FWCI
7.88
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering. https://app.cochat.ai/papers/10.1021/nl102756r
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Chiu, H.-Y., Perebeinos, V., Lin, Y.-M., & Avouris, P. (2010). Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering. Nano Letters. https://doi.org/10.1021/nl102756r

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.