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Gate-Controlled Nonlinear Conductivity of Dirac Fermion in Graphene Field-Effect Transistors Measured by Terahertz Time-Domain Spectroscopy
Abstract
We present terahertz spectroscopic measurements of Dirac fermion dynamics from a large-scale graphene that was grown by chemical vapor deposition and on which carrier density was modulated by electrostatic and chemical doping. The measured frequency-dependent optical sheet conductivity of graphene shows electron-density-dependence characteristics, which can be understood by a simple Drude model. In a low carrier density regime, the optical sheet conductivity of graphene is constant regardless of the applied gate voltage, but in a high carrier density regime, it has nonlinear behavior with respect to the applied gate voltage. Chemical doping using viologen was found to be efficient in controlling the equilibrium Fermi level without sacrificing the unique carrier dynamics of graphene.
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Cited by
Switching terahertz waves with gate-controlled active graphene metamaterials
Lee, S. H., Choi, M., Kim, T.-T., Lee, S., Liu, M., Yin, X., Choi, H. K., Lee, S. S., Choi, C.-G., Choi, S.-Y., et al. (2012) · Nature Materials · doi:10.1038/nmat3433 · Cited by 935
Self-citationChemical vapour deposition growth of large single crystals of monolayer and bilayer graphene
Zhou, H., Yu, W. J., Liu, L., Cheng, R., Chen, Y., Huang, X., Liu, Y., Wang, Y., Huang, Y., & Duan, X. (2013) · Nature Communications · doi:10.1038/ncomms3096 · Cited by 592
Terahertz and Infrared Spectroscopy of Gated Large-Area Graphene
Ren, L., Zhang, Q., Yao, J., Sun, Z., Kaneko, R., Yan, Z., Nanot, S., Jin, Z., Kawayama, I., Tonouchi, M., et al. (2012) · Nano Letters · doi:10.1021/nl301496r · Cited by 261
Whelan, P. R., Iwaszczuk, K., Wang, R., Hofmann, S., Bøggild, P., & Jepsen, P. U. (2017) · Optics Express · doi:10.1364/oe.25.002725 · Cited by 43
Metadata
- Authors
- Maeng, I., Lim, S., Chae, S. J., Lee, Y. H., Choi, H., & Son, J.-H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-01-09
- Volume
- 12
- Issue
- 2
- Pages
- 551-555
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2321534028
- Cited by
- 184
- References
- 0
- FWCI
- 9.12
- Type
- journal article
- Language
- en
- Open access
- closed
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- Maeng, I., Lim, S., Chae, S. J., Lee, Y. H., Choi, H., & Son, J.-H. (2012). Gate-Controlled Nonlinear Conductivity of Dirac Fermion in Graphene Field-Effect Transistors Measured by Terahertz Time-Domain Spectroscopy. Nano Letters. https://doi.org/10.1021/nl202442b
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