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Strong Tuning of Rashba Spin–Orbit Interaction in Single InAs Nanowires
Open accessAbstract
A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin-orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin-orbit interaction in InAs nanowires where a strong electric field is created by either a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables 6-fold tuning of Rashba coefficient and nearly 3 orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin-orbit interaction in nanowires may have implications in nanowire-based spintronic devices.
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Cites
Subthreshold Regime has the Optimal Sensitivity for Nanowire FET Biosensors
Gao, X. P. A., Zheng, G., & Lieber, C. M. (2010) · Nano Letters · doi:10.1021/nl9034219 · Cited by 571
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Cited by
Rashba and Dresselhaus Effects in Hybrid Organic–Inorganic Perovskites: From Basics to Devices
Kepenekian, M., Robles, R., Katan, C., Sapori, D., Pedesseau, L., & Even, J. (2015) · ACS Nano · doi:10.1021/acsnano.5b04409 · Cited by 419
Metadata
- Authors
- Liang, D., & Gao, X. P. A.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-05-04
- Volume
- 12
- Issue
- 6
- Pages
- 3263-3267
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2052632135
- Cited by
- 180
- References
- 1
- FWCI
- 5.32
- Type
- journal article
- Language
- en
- Open access
- green
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- Liang, D., & Gao, X. P. A. (2012). Strong Tuning of Rashba Spin–Orbit Interaction in Single InAs Nanowires. Nano Letters. https://doi.org/10.1021/nl301325h
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