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Cited by 1,337

The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

Lee, Hee Sung, Min, Sung-Wook, Chang, Youn-Gyung, Park, Min Kyu, Nam, Taewook, Kim, Hyungjun, Kim, Jae Hoon, Ryu, Sunmin, Im, Seongil·2012·Nano Letters

Abstract

We report on the fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode. Our devices with triple MoS(2) layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS(2) layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS(2) has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS(2) reduce to 1.65 and 1.35 eV, respectively.

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Crossref · 10.1021/nl301485q

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Metadata

Authors
Lee, H. S., Min, S.-W., Chang, Y.-G., Park, M. K., Nam, T., Kim, H., Kim, J. H., Ryu, S., & Im, S.
Venue
Nano Letters
Published
2012-06-13
Volume
12
Issue
7
Pages
3695-3700
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2010831213
Cited by
1,337
References
4
FWCI
50.53
Type
journal article
Language
en
Open access
closed

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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