The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Embedding Plasmonic Nanostructure Diodes Enhances Hot Electron Emission
Abstract
When plasmonic nanostructures serve as the metallic counterpart of a metal-semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.
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Citations
Cites
Optical Constants of the Noble Metals
Johnson, P. B., & Christy, R. W. (1972) · Physical Review B · doi:10.1103/physrevb.6.4370 · Cited by 20,094
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Cited by
Clavero, C. (2014) · Nature Photonics · doi:10.1038/nphoton.2013.238 · Cited by 2,762
Distinguishing between plasmon-induced and photoexcited carriers in a device geometry
Zheng, B. Y., Zhao, H., Manjavacas, A., McClain, M., Nordlander, P., & Halas, N. J. (2015) · Nature Communications · doi:10.1038/ncomms8797 · Cited by 382
Self-citationControlling the Spatial and Momentum Distributions of Plasmonic Carriers: Volume vs Surface Effects
Pettine, J., Meyer, S. M., Medeghini, F., Murphy, C. J., & Nesbitt, D. J. (2021) · ACS Nano · doi:10.1021/acsnano.0c09045 · Cited by 24
Metadata
- Authors
- Knight, M. W., Wang, Y., Urban, A. S., Sobhani, A., Zheng, B. Y., Nordlander, P., & Halas, N. J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-03-06
- Volume
- 13
- Issue
- 4
- Pages
- 1687-1692
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2078139034
- Cited by
- 330
- References
- 2
- FWCI
- 17.18
- Type
- journal article
- Language
- en
- Open access
- closed
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- Knight, M. W., Wang, Y., Urban, A. S., Sobhani, A., Zheng, B. Y., Nordlander, P., & Halas, N. J. (2013). Embedding Plasmonic Nanostructure Diodes Enhances Hot Electron Emission. Nano Letters. https://doi.org/10.1021/nl400196z
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