The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Ion Implantation of Graphene—Toward IC Compatible Technologies
Abstract
Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
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Citations
Cites
Superior Thermal Conductivity of Single-Layer Graphene
Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008) · Nano Letters · doi:10.1021/nl0731872 · Cited by 13,823
Cited by
Design, Fabrication, and Mechanism of Nitrogen‐Doped Graphene‐Based Photocatalyst
Bie, C., Yu, H., Cheng, B., Ho, W., Fan, J., & Yu, J. (2021) · Advanced Materials · doi:10.1002/adma.202003521 · Cited by 554
Lin, Y., Dumcenco, D. O., Komsa, H., Niimi, Y., Krasheninnikov, A. V., Huang, Y., & Suenaga, K. (2014) · Advanced Materials · doi:10.1002/adma.201304985 · Cited by 296
Hong, J., Jin, C., Yuan, J., & Zhang, Z. (2017) · Advanced Materials · doi:10.1002/adma.201606434 · Cited by 293
Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures
Lin, Y.-C., Liu, C., Yu, Y., Zarkadoula, E., Yoon, M., Puretzky, A. A., Liang, L., Kong, X., Gu, Y., Strasser, A., et al. (2020) · ACS Nano · doi:10.1021/acsnano.9b10196 · Cited by 284
Atomic Structure and Dynamics of Metal Dopant Pairs in Graphene
He, Z., He, K., Robertson, A. W., Kirkland, A. I., Kim, D., Ihm, J., Yoon, E., Lee, G.-D., & Warner, J. H. (2014) · Nano Letters · doi:10.1021/nl500682j · Cited by 264
Metadata
- Authors
- Bangert, U., Pierce, W., Kepaptsoglou, D. M., Ramasse, Q., Zan, R., Gass, M. H., Van den Berg, J. A., Boothroyd, C. B., Amani, J., & Hofsäss, H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-10-01
- Volume
- 13
- Issue
- 10
- Pages
- 4902-4907
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2014504491
- Cited by
- 213
- References
- 1
- FWCI
- 7.99
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.