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Cited by 213

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Ion Implantation of Graphene—Toward IC Compatible Technologies

Bangert, U., Pierce, W., Kepaptsoglou, D. M., Ramasse, Q., Zan, R., Gass, M. H., Van den Berg, J. A., Boothroyd, C. B., Amani, J., Hofsäss, H.·2013·Nano Letters

Abstract

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.

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Crossref · 10.1021/nl402812y

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Metadata

Authors
Bangert, U., Pierce, W., Kepaptsoglou, D. M., Ramasse, Q., Zan, R., Gass, M. H., Van den Berg, J. A., Boothroyd, C. B., Amani, J., & Hofsäss, H.
Venue
Nano Letters
Published
2013-10-01
Volume
13
Issue
10
Pages
4902-4907
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2014504491
Cited by
213
References
1
FWCI
7.99
Type
journal article
Language
en
Open access
closed

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.