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Epsilon-Near-Zero Strong Coupling in Metamaterial-Semiconductor Hybrid Structures

Jun, Young Chul, Reno, John, Ribaudo, Troy, Shaner, Eric, Greffet, Jean-Jacques, Vassant, Simon, Marquier, Francois, Sinclair, Mike, Brener, Igal·2013·Nano Letters

Abstract

We present a new type of electrically tunable strong coupling between planar metamaterials and epsilon-near-zero modes that exist in a doped semiconductor nanolayer. The use of doped semiconductors makes this strong coupling tunable over a wide range of wavelengths through the use of different doping densities. We also modulate this coupling by depleting the doped semiconductor layer electrically. Our hybrid approach incorporates strong optical interactions into a highly tunable, integrated device platform.

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Metadata

Authors
Jun, Y. C., Reno, J., Ribaudo, T., Shaner, E., Greffet, J.-J., Vassant, S., Marquier, F., Sinclair, M., & Brener, I.
Venue
Nano Letters
Published
2013-10-18
Volume
13
Issue
11
Pages
5391-5396
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2059170671
Cited by
214
References
0
FWCI
6.36
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Epsilon-Near-Zero Strong Coupling in Metamaterial-Semiconductor Hybrid Structures. https://app.cochat.ai/papers/10.1021/nl402939t
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Jun, Y. C., Reno, J., Ribaudo, T., Shaner, E., Greffet, J.-J., Vassant, S., Marquier, F., Sinclair, M., & Brener, I. (2013). Epsilon-Near-Zero Strong Coupling in Metamaterial-Semiconductor Hybrid Structures. Nano Letters. https://doi.org/10.1021/nl402939t

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