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Cited by 510

The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.

Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2

Open access
Zhao, Weijie, Ribeiro, R. M., Toh, Minglin, Carvalho, Alexandra, Kloc, Christian, Castro Neto, A. H., Eda, Goki·2013·Nano Letters
DOI 10.1021/nl403270k
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Abstract

It has been well-established that single layer MX2 (M = Mo, W and X = S, Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton photoluminescence peak. Highly anisotropic thermal expansion of the lattice and the corresponding evolution of the band structure result in a distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys.

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Metadata

Authors
Zhao, W., Ribeiro, R. M., Toh, M., Carvalho, A., Kloc, C., Castro Neto, A. H., & Eda, G.
Venue
Nano Letters
Publisher
American Chemical Society (ACS)
Published
2013-11-04
Volume
13
Issue
11
Pages
5627-5634
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
DOI
10.1021/nl403270k
OpenAlex
W1981746506
Cited by
510
References
5
FWCI
16.87
Type
journal article
Language
en
Open access
green

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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