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Cited by 253

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Influence of Excited Carriers on the Optical and Electronic Properties of MoS2

Steinhoff, A., Rösner, M., Jahnke, F., Wehling, T. O., Gies, C.·2014·Nano Letters

Abstract

We study the ground-state and finite-density optical response of molybdenum disulfide by solving the semiconductor Bloch equations, using ab initio band structures and Coulomb interaction matrix elements. Spectra for excited carrier densities up to 10(13) cm(-2) reveal a redshift of the excitonic ground-state absorption, whereas higher excitonic lines are found to disappear successively due to Coulomb-induced band gap shrinkage of more than 500 meV and binding-energy reduction. Strain-induced band variations lead to a redshift of the lowest exciton line by ∼110 meV/% and change the direct transition to indirect while maintaining the magnitude of the optical response.

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Crossref · 10.1021/nl500595u

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Metadata

Authors
Steinhoff, A., Rösner, M., Jahnke, F., Wehling, T. O., & Gies, C.
Venue
Nano Letters
Published
2014-06-26
Volume
14
Issue
7
Pages
3743-3748
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2315678872
Cited by
253
References
2
FWCI
8.19
Type
journal article
Language
en
Open access
closed

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