The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
Open accessAbstract
Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V(-1) s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ∼1000 cm(2) V(-1) s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
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Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationElectronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Self-citation
Cited by
Van der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Photonics with hexagonal boron nitride
Caldwell, J. D., Aharonovich, I., Cassabois, G., Edgar, J. H., Gil, B., & Basov, D. N. (2019) · Nature Reviews Materials · doi:10.1038/s41578-019-0124-1 · Cited by 895
Strong interface-induced spin–orbit interaction in graphene on WS2
Wang, Z., Ki, D., Chen, H., Berger, H., MacDonald, A. H., & Morpurgo, A. F. (2015) · Nature Communications · doi:10.1038/ncomms9339 · Cited by 444
Van der Waals heterostructures
Castellanos-Gomez, A., Duan, X., Fei, Z., Gutierrez, H. R., Huang, Y., Huang, X., Quereda, J., Qian, Q., Sutter, E., & Sutter, P. (2022) · Nature Reviews Methods Primers · doi:10.1038/s43586-022-00139-1 · Cited by 423
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
Wang, S., Wang, X., & Warner, J. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b00655 · Cited by 389
Metadata
- Authors
- Kretinin, A. V., Cao, Y., Tu, J. S., Yu, G. L., Jalil, R., Novoselov, K. S., Haigh, S. J., Gholinia, A., Mishchenko, A., Lozada, M., Georgiou, T., Woods, C. R., Withers, F., Blake, P., Eda, G., Wirsig, A., Hucho, C., Watanabe, K., Taniguchi, T., Geim, A. K., & Gorbachev, R. V.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-05-23
- Volume
- 14
- Issue
- 6
- Pages
- 3270-3276
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2055532300
- Cited by
- 506
- References
- 4
- FWCI
- 21.59
- Type
- journal article
- Language
- en
- Open access
- green
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