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High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Open accessAbstract
We report the fabrication of both n-type and p-type WSe2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close to the quantum conductance e(2)/h, a high ON/OFF ratio of >10(7) at 170 K, and large electron and hole mobility of μ ≈ 200 cm(2) V(-1 )s(-1) at 160 K. Decreasing the temperature to 77 K increases mobility of electrons to ∼330 cm(2) V(-1) s(-1) and that of holes to ∼270 cm(2) V(-1) s(-1). We attribute our ability to observe the intrinsic, phonon-limited conduction in both the electron and hole channels to the drastic reduction of the Schottky barriers between the channel and the graphene contact electrodes using IL gating. We elucidate this process by studying a Schottky diode consisting of a single graphene/WSe2 Schottky junction. Our results indicate the possibility to utilize chemically or electrostatically highly doped graphene for versatile, flexible, and transparent low-resistance ohmic contacts to a wide range of quasi-2D semiconductors.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
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Recent Advances in Two-Dimensional Materials beyond Graphene
Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
Das, S., Robinson, J. A., Dubey, M., Terrones, H., & Terrones, M. (2015) · Annual Review of Materials Research · doi:10.1146/annurev-matsci-070214-021034 · Cited by 640
Li, S.-L., Tsukagoshi, K., Orgiu, E., & Samorì, P. (2016) · Chemical Society Reviews · doi:10.1039/c5cs00517e · Cited by 549
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Metadata
- Authors
- Chuang, H.-J., Tan, X., Ghimire, N. J., Perera, M. M., Chamlagain, B., Cheng, M. M.-C., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-05-22
- Volume
- 14
- Issue
- 6
- Pages
- 3594-3601
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2069001158
- Cited by
- 483
- References
- 2
- FWCI
- 22.63
- Type
- journal article
- Language
- en
- Open access
- green
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