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Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4
Open accessAbstract
Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of ∼ 0.18 eV, in single-layer Bi4Br4, which could be exfoliated from its three-dimensional bulk material due to the weakly bonded layered structure. The band gap of single-layer Bi4Br4 is tunable via strain engineering, and the QSH phase is robust against external strain. Moreover, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi4Br4 could be torn to ribbons with clean and atomically sharp edges. These nanoribbons, which have single-Dirac-cone edge states crossing the bulk band gap, are ideal wires for dissipationless transport. Our work thus provides a new promising material for experimental studies and practical applications of the QSH effect.
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Cites
Topological insulators and superconductors
Qi, X.-L., & Zhang, S.-C. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.1057 · Cited by 14,394
Quantum Spin Hall Insulator State in HgTe Quantum Wells
König, M., Wiedmann, S., Brüne, C., Roth, A., Buhmann, H., Molenkamp, L. W., Qi, X.-L., & Zhang, S.-C. (2007) · Science · doi:10.1126/science.1148047 · Cited by 6,151
Topological insulators with inversion symmetry
Fu, L., & Kane, C. L. (2007) · Physical Review B · doi:10.1103/physrevb.76.045302 · Cited by 4,252
Cited by
Colloquium : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587
Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal
Wu, S., Fatemi, V., Gibson, Q. D., Watanabe, K., Taniguchi, T., Cava, R. J., & Jarillo-Herrero, P. (2018) · Science · doi:10.1126/science.aan6003 · Cited by 851
Recent progress in 2D group-VA semiconductors: from theory to experiment
Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00125h · Cited by 850
Liu, Q., Zhang, X., Abdalla, L. B., Fazzio, A., & Zunger, A. (2015) · Nano Letters · doi:10.1021/nl5043769 · Cited by 485
Large-gap two-dimensional topological insulator in oxygen functionalized MXene
Weng, H., Ranjbar, A., Liang, Y., Song, Z., Khazaei, M., Yunoki, S., Arai, M., Kawazoe, Y., Fang, Z., & Dai, X. (2015) · Physical Review B · doi:10.1103/physrevb.92.075436 · Cited by 314
Metadata
- Authors
- Zhou, J.-J., Feng, W., Liu, C.-C., Guan, S., & Yao, Y.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-07-28
- Volume
- 14
- Issue
- 8
- Pages
- 4767-4771
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2068486250
- Cited by
- 193
- References
- 3
- FWCI
- 11.31
- Type
- journal article
- Language
- en
- Open access
- green
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