The DOI matches its Crossref record.
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Abstract
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“InP NWs were employed in this work, with lasing emission at room temperature in the range of ~ 840 - 900 nm [30][31]”
From Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate (2017) · cites this paper as [30]
Citations
Cites
Still being checked.
Research works printed but not linked: 41
- Chau R., 2007, Nat. Mater., 6, 810, 10.1038/nmat2014 · DOI
- Tomioka K., 2012, Nature, 488, 189, 10.1038/nature11293 · DOI
- Wallentin J., 2013, Science, 339, 1057, 10.1126/science.1230969 · DOI
- Tchernycheva M., 2014, Nano Lett., 14, 3515, 10.1021/nl501124s · DOI
- Rosenwaks Y., 1990, Appl. Phys. Lett., 57, 2552, 10.1063/1.103814 · DOI
- Bai Y., 2011, Appl. Phys. Lett., 98, 181102, 10.1063/1.3586773 · DOI
- Flückiger R., 2014, Appl. Phys. Express, 7, 034105, 10.7567/APEX.7.034105 · DOI
- Paiman S., 2009, Nanotechnology, 20, 225606, 10.1088/0957-4484/20/22/225606 · DOI
- Joyce H. J., 2012, Nano Lett., 12, 5325, 10.1021/nl3026828 · DOI
- Vu T. T. T., 2013, Nanotechnology, 24, 115705, 10.1088/0957-4484/24/11/115705 · DOI
- Kitauchi Y., 2010, Nano Lett., 10, 1699, 10.1021/nl1000407 · DOI
- Dalacu D., 2012, Nano Lett., 12, 5919, 10.1021/nl303327h · DOI
- Alouane M. H. H., 2013, Nanotechnology, 24, 035704, 10.1088/0957-4484/24/3/035704 · DOI
- Dubrovskii V. G., 2014, Nucleation Theory and Growth of Nanostructures, 10.1007/978-3-642-39660-1 · DOI
- Saxena D., 2013, Nat. Photonics, 7, 963, 10.1038/nphoton.2013.303 · DOI
- Bar-Sadan M., 2012, Nano Lett., 12, 2352, 10.1021/nl300314k · DOI
- Breuer S., 2011, Nano Lett., 11, 1276, 10.1021/nl104316t · DOI
- Jiang N., 2013, Nano Lett., 13, 5135, 10.1021/nl4023385 · DOI
- Heurlin M., 2014, Nano Lett., 14, 749, 10.1021/nl404039d · DOI
- Ikejiri K., 2007, J. Cryst. Growth, 298, 616, 10.1016/j.jcrysgro.2006.10.179 · DOI
- Yoshimura M., 2013, Appl. Phys. Express, 6, 052301, 10.7567/APEX.6.052301 · DOI
- Yoshimura M., 2013, Appl. Phys. Lett., 103, 243111, 10.1063/1.4847355 · DOI
- Gao Q., 2012, Conf. Optoelectron. Microelectron. Mater. Devices, 45
- Bolinsson J., 2011, Nanotechnology, 22, 265606, 10.1088/0957-4484/22/26/265606 · DOI
- Ghalamestani S. G., 2012, Nanotechnology, 23, 285601, 10.1088/0957-4484/23/28/285601 · DOI
- Ikejiri K., 2011, Nano Lett., 11, 4314, 10.1021/nl202365q · DOI
- Ikejiri K., 2012, Nano Lett., 12, 524, 10.1021/nl2042886 · DOI
- Caroff P., 2011, IEEE J. Sel. Top. Quantum Electron., 17, 829, 10.1109/JSTQE.2010.2070790 · DOI
- Lehmann S., 2013, Nano Lett., 13, 4099, 10.1021/nl401554w · DOI
- Shapiro J. N., 2013, Nanotechnology, 24, 475601, 10.1088/0957-4484/24/47/475601 · DOI
- Zimmler M. A., 2010, Semicond. Sci. Technol., 25, 024001, 10.1088/0268-1242/25/2/024001 · DOI · Paper page
- Tuin G., 2011, Nano Res., 4, 159, 10.1007/s12274-010-0065-x · DOI
- De A., 2010, Phys. Rev. B, 81, 155210, 10.1103/PhysRevB.81.155210 · DOI
- Ahrenkiel R. K., 1993, Semiconductors and Semimetals, 39, 39
- Jiang N., 2012, Appl. Phys. Lett., 101, 023111, 10.1063/1.4735002 · DOI
- Yoo Y.-S., 2013, Appl. Phys. Lett., 102, 211107, 10.1063/1.4807485 · DOI
- Ren F., 2013, Appl. Phys. Lett., 102, 012115, 10.1063/1.4775377 · DOI
- Li K., 2013, Nano Lett., 14, 183, 10.1186/1556-276X-8-183 · DOI
- Fang Z. M., 1991, Appl. Phys. Lett., 59, 1446, 10.1063/1.105283 · DOI
- Mayer B., 2013, Nat. Commun., 4, 2931, 10.1038/ncomms3931 · DOI
- Wang Z., 2013, Nano Lett., 13, 5063, 10.1021/nl402145r · DOI
Cited by
Sorted by citations
Jevtics, D., Hurtado, A., Guilhabert, B., McPhillimy, J., Cantarella, G., Gao, Q., Tan, H. H., Jagadish, C., Strain, M. J., & Dawson, M. D. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b02178 · Cited by 61
Self-citationGuilhabert, B., Hurtado, A., Jevtics, D., Gao, Q., Tan, H. H., Jagadish, C., & Dawson, M. D. (2016) · ACS Nano · doi:10.1021/acsnano.5b07752 · Cited by 61
Self-citation
Metadata
- Authors
- Gao, Q., Saxena, D., Wang, F., Fu, L., Mokkapati, S., Guo, Y., Li, L., Wong-Leung, J., Caroff, P., Tan, H. H., & Jagadish, C.
- Affiliations
- Australian National University (AU)
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, ‡Australian National Fabrication Facility, Research School of Physics and Engineering, and §Centre for Advanced Microscopy, The Australian National University, Canberra, ACT 0200, Australia
- Corresponding author
- Gao, Qian
- ORCID
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-08-15
- Volume
- 14
- Issue
- 9
- Pages
- 5206-5211
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2091289239
- Cited by
- 230
- References
- 0
- Citations by year
- 2026: 6 · 2025: 13 · 2024: 11 · 2023: 18 · 2022: 19 · 2021: 21 · 2020: 15 · 2019: 25 · 2018: 25 · 2017: 20 · 2016: 31 · 2015: 21 · 2014: 4
- FWCI
- 13.15
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nano Letters (publishedVersion)
- PubMed (publishedVersion)
- ORCA Online Research @Cardiff (Cardiff University) (submittedVersion)
- ANU Open Research (Australian National University) (submittedVersion)
- OPUS - Open Publications of UTS Scholars (University of Technology Sydney) (submittedVersion)
- Funders
- Australian Research Council
- Topics
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Nanowire Synthesis and Applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Keywords
- InP nanowires, wurtzite structure, selective epitaxial growth, metalorganic chemical vapor deposition, quantum efficiency, room-temperature lasing, stacking faults, nanowire growth
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review