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Cited by 174

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Conductance of p-n-p Graphene Structures with “Air-Bridge” Top Gates

Open access
Gorbachev, Roman V., Mayorov, Alexander S., Savchenko, Alexander K., Horsell, David W., Guinea, Francisco·2008·Nano Letters

Abstract

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realize p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.

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Metadata

Authors
Gorbachev, R. V., Mayorov, A. S., Savchenko, A. K., Horsell, D. W., & Guinea, F.
Venue
Nano Letters
Published
2008-06-11
Volume
8
Issue
7
Pages
1995-1999
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2070707388
Cited by
174
References
1
FWCI
9.94
Type
journal article
Language
en
Open access
green

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.