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Operation of Graphene Transistors at Gigahertz Frequencies

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Lin, Yu-Ming, Jenkins, Keith A., Valdes-Garcia, Alberto, Small, Joshua P., Farmer, Damon B., Avouris, Phaedon·2009·Nano Letters

Abstract

Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.

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Metadata

Authors
Lin, Y.-M., Jenkins, K. A., Valdes-Garcia, A., Small, J. P., Farmer, D. B., & Avouris, P.
Venue
Nano Letters
Published
2009-01-14
Volume
9
Issue
1
Pages
422-426
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W1901415922
Cited by
1,068
References
0
FWCI
53.05
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Operation of Graphene Transistors at Gigahertz Frequencies. https://app.cochat.ai/papers/10.1021/nl803316h
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Lin, Y.-M., Jenkins, K. A., Valdes-Garcia, A., Small, J. P., Farmer, D. B., & Avouris, P. (2009). Operation of Graphene Transistors at Gigahertz Frequencies. Nano Letters. https://doi.org/10.1021/nl803316h

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.