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Cited by 287

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Four-Terminal Magneto-Transport in Graphene p-n Junctions Created by Spatially Selective Doping

Open access
Lohmann, Timm, von Klitzing, Klaus, Smet, Jurgen H.·2009·Nano Letters

Abstract

In this paper, we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about influences on the initial doping of freshly prepared graphene. We investigated the removal of adsorbates by vacuum treatment, annealing, and compensation doping using NH(3). Hysteretic behavior is observed in the electric field effect due to dipolar adsorbates like water and NH(3). Finally we demonstrate spatially selective doping of graphene using patterned PMMA. Four-terminal transport measurements of the p-n devices reveal edge channel mixing in the quantum hall regime. Quantized resistances of h/e(2), h/3e(2) and h/15e(2) can be observed as expected from theory.

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Crossref · 10.1021/nl900203n

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Metadata

Authors
Lohmann, T., von Klitzing, K., & Smet, J. H.
Venue
Nano Letters
Published
2009-04-10
Volume
9
Issue
5
Pages
1973-1979
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W1993666566
Cited by
287
References
3
FWCI
15.15
Type
journal article
Language
en
Open access
green

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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