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Cited by 282

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Dielectric Screening Enhanced Performance in Graphene FET

Chen, Fang, Xia, Jilin, Ferry, David K., Tao, Nongjian·2009·Nano Letters

Abstract

We have studied the transport properties of graphene transistors in different solvents with dielectric constant varying over 2 orders of magnitude. Upon increasing the dielectric constant, the carrier mobility increases up to 3 orders of magnitude and reaches approximately 7 x 10(4) cm(2)/v.s at the dielectric constant of approximately 47. This mobility value changes little in higher dielectric constant solvents, which indicates that we are approaching the intrinsic limit of room temperature mobility in graphene supported on SiO(2) substrates. The results are discussed in terms of long-range Coulomb scattering originated from the charged impurities underneath graphene.

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Metadata

Authors
Chen, F., Xia, J., Ferry, D. K., & Tao, N.
Venue
Nano Letters
Published
2009-06-04
Volume
9
Issue
7
Pages
2571-2574
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2051365563
Cited by
282
References
1
FWCI
11.80
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Dielectric Screening Enhanced Performance in Graphene FET. https://app.cochat.ai/papers/10.1021/nl900725u
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Chen, F., Xia, J., Ferry, D. K., & Tao, N. (2009). Dielectric Screening Enhanced Performance in Graphene FET. Nano Letters. https://doi.org/10.1021/nl900725u

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