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Biaxial Strain in Graphene Adhered to Shallow Depressions

Metzger, Constanze, Rémi, Sebastian, Liu, Mengkun, Kusminskiy, Silvia V., Castro Neto, Antonio H., Swan, Anna K., Goldberg, Bennett B.·2010·Nano Letters

Abstract

Measurements on graphene exfoliated over a substrate prepatterned with shallow depressions demonstrate that graphene does not remain free-standing but instead adheres to the substrate despite the induced biaxial strain. The strain is homogeneous over the depression bottom as determined by Raman measurements. We find higher Raman shifts and Gruneisen parameters of the phonons underlying the G and 2D bands under biaxial strain than previously reported. Interference modeling is used to determine the vertical position of the graphene and to calculate the optimum dielectric substrate stack for maximum Raman signal.

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Metadata

Authors
Metzger, C., Rémi, S., Liu, M., Kusminskiy, S. V., Castro Neto, A. H., Swan, A. K., & Goldberg, B. B.
Venue
Nano Letters
Published
2009-11-23
Volume
10
Issue
1
Pages
6-10
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2168137335
Cited by
212
References
0
FWCI
6.70
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Biaxial Strain in Graphene Adhered to Shallow Depressions. https://app.cochat.ai/papers/10.1021/nl901625v
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Metzger, C., Rémi, S., Liu, M., Kusminskiy, S. V., Castro Neto, A. H., Swan, A. K., & Goldberg, B. B. (2010). Biaxial Strain in Graphene Adhered to Shallow Depressions. Nano Letters. https://doi.org/10.1021/nl901625v

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