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Cited by 414

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Li, Zhancheng, Wu, Ping, Wang, Chenxi, Fan, Xiaodong, Zhang, Wenhua, Zhai, Xiaofang, Zeng, Changgan, Li, Zhenyu, Yang, Jinlong, Hou, Jianguo·2011·ACS Nano

Abstract

Graphene has attracted a lot of research interest owing to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000 °C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400 °C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300 °C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to an undemanding route for economical and convenient graphene growth.

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Metadata

Authors
Li, Z., Wu, P., Wang, C., Fan, X., Zhang, W., Zhai, X., Zeng, C., Li, Z., Yang, J., & Hou, J.
Venue
ACS Nano
Published
2011-03-29
Volume
5
Issue
4
Pages
3385-3390
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2330036656
Cited by
414
References
3
FWCI
15.80
Type
journal article
Language
en
Open access
closed

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