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Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals

Open access
Shi, Hongyan, Yan, Rusen, Bertolazzi, Simone, Brivio, Jacopo, Gao, Bo, Kis, Andras, Jena, Debdeep, Xing, Huili Grace, Huang, Libai·2013·ACS Nano

Abstract

Femtosecond transient absorption spectroscopy and microscopy were employed to study exciton dynamics in suspended and Si₃N₄ substrate-supported monolayer and few-layer MoS₂ 2D crystals. Exciton dynamics for the monolayer and few-layer structures were found to be remarkably different from those of thick crystals when probed at energies near that of the lowest energy direct exciton (A exciton). The intraband relaxation rate was enhanced by more than 40 fold in the monolayer in comparison to that observed in the thick crystals, which we attributed to defect assisted scattering. Faster electron-hole recombination was found in monolayer and few-layer structures due to quantum confinement effects that lead to an indirect-direct band gap crossover. Nonradiative rather than radiative relaxation pathways dominate the dynamics in the monolayer and few-layer MoS₂. Fast trapping of excitons by surface trap states was observed in monolayer and few-layer structures, pointing to the importance of controlling surface properties in atomically thin crystals such as MoS₂ along with controlling their dimensions.

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Crossref · 10.1021/nn303973r

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Metadata

Authors
Shi, H., Yan, R., Bertolazzi, S., Brivio, J., Gao, B., Kis, A., Jena, D., Xing, H. G., & Huang, L.
Venue
ACS Nano
Published
2013-01-07
Volume
7
Issue
2
Pages
1072-1080
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2137246288
Cited by
839
References
1
FWCI
18.24
Type
journal article
Language
en
Open access
green

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