The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Few-Layer MoS2: A Promising Layered Semiconductor
Abstract
Due to the recent expanding interest in two-dimensional layered materials, molybdenum disulfide (MoS2) has been receiving much research attention. Having an ultrathin layered structure and an appreciable direct band gap of 1.9 eV in the monolayer regime, few-layer MoS2 has good potential applications in nanoelectronics, optoelectronics, and flexible devices. In addition, the capability of controlling spin and valley degrees of freedom makes it a promising material for spintronic and valleytronic devices. In this review, we attempt to provide an overview of the research relevant to the structural and physical properties, fabrication methods, and electronic devices of few-layer MoS2. Recent developments and advances in studying the material are highlighted.
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Cites
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Synthesis of MoS 2 and MoSe 2 Films with Vertically Aligned Layers
Kong, D., Wang, H., Cha, J. J., Pasta, M., Koski, K. J., Yao, J., & Cui, Y. (2013) · Nano Letters · doi:10.1021/nl400258t · Cited by 2,250
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
k · p theory for two-dimensional transition metal dichalcogenide semiconductors
Kormányos, A., Burkard, G., Gmitra, M., Fabian, J., Zólyomi, V., Drummond, N. D., & Fal’ko, V. (2015) · 2D Materials · doi:10.1088/2053-1583/2/2/022001 · Cited by 1,076
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Wang, X., Wang, P., Wang, J., Hu, W., Zhou, X., Guo, N., Huang, H., Sun, S., Shen, H., Lin, T., et al. (2015) · Advanced Materials · doi:10.1002/adma.201503340 · Cited by 853
Vacancy-Induced Ferromagnetism of MoS2 Nanosheets
Cai, L., He, J., Liu, Q., Yao, T., Chen, L., Yan, W., Hu, F., Jiang, Y., Zhao, Y., Hu, T., et al. (2015) · Journal of the American Chemical Society · doi:10.1021/ja5120908 · Cited by 834
Solution‐Processed Two‐Dimensional MoS2 Nanosheets: Preparation, Hybridization, and Applications
Zhang, X., Lai, Z., Tan, C., & Zhang, H. (2016) · Angewandte Chemie International Edition · doi:10.1002/anie.201509933 · Cited by 678
Charge-transfer-based Gas Sensing Using Atomic-layer MoS2
Cho, B., Hahm, M. G., Choi, M., Yoon, J., Kim, A. R., Lee, Y.-J., Park, S.-G., Kwon, J.-D., Kim, C. S., Song, M., et al. (2015) · Scientific Reports · doi:10.1038/srep08052 · Cited by 649
Metadata
- Authors
- Ganatra, R., & Zhang, Q.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-04-14
- Volume
- 8
- Issue
- 5
- Pages
- 4074-4099
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2331708333
- Cited by
- 1,422
- References
- 3
- FWCI
- 62.24
- Type
- journal article
- Language
- en
- Open access
- closed
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