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Role of Ga Vacancy on a Multilayer GaTe Phototransistor
Abstract
We report a high-performance field-effect transistor (FET) and phototransistor based on back-gated multilayer GaTe nanosheets. Through both electrical transport measurements at variable temperatures and first-principles calculations, we find Ga ion vacancy is the critical factor that causes high off-state current, low on/off ratio, and large hysteresis of GaTe FET at room temperature. By suppressing thermally activated Ga vacancy defects at liquid nitrogen temperature, a GaTe nanosheet FET with on/off ratio of ∼10(5), off-state current of ∼10(-12) A, and negligible gate hysteresis is successfully demonstrated. Furthermore, a GaTe phototransistor with high photogain above 2000 and high responsivity over 800 AW(-1) is achieved, as well. Our findings are of scientific importance to understand the physical nature of intrinsic GaTe transistor performance degradation and also technical significance to unlock the hurdle for practical applications of GaTe transistors in the future.
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Cites
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Cited by
Structural and electronic properties of monolayer group III monochalcogenides
Demirci, S., Avazlı, N., Durgun, E., & Cahangirov, S. (2017) · Physical Review B · doi:10.1103/physrevb.95.115409 · Cited by 432
Emerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
Metadata
- Authors
- Wang, Z., Xu, K., Li, Y., Zhan, X., Safdar, M., Wang, Q., Wang, F., & He, J.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-04-07
- Volume
- 8
- Issue
- 5
- Pages
- 4859-4865
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2322983051
- Cited by
- 193
- References
- 1
- FWCI
- 9.53
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wang, Z., Xu, K., Li, Y., Zhan, X., Safdar, M., Wang, Q., Wang, F., & He, J. (2014). Role of Ga Vacancy on a Multilayer GaTe Phototransistor. ACS Nano. https://doi.org/10.1021/nn500782n
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