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High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
Abstract
In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron injection. An ON/OFF current ratio of >10(4) is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Multifunctional high-performance van der Waals heterostructures
Huang, M., Li, S., Zhang, Z., Xiong, X., Li, X., & Wu, Y. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.208 · Cited by 389
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures
Cheng, J., Wang, C., Zou, X., & Liao, L. (2019) · Advanced Optical Materials · doi:10.1002/adom.201800441 · Cited by 359
Metadata
- Authors
- Tosun, M., Chuang, S., Fang, H., Sachid, A. B., Hettick, M., Lin, Y., Zeng, Y., & Javey, A.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-04-03
- Volume
- 8
- Issue
- 5
- Pages
- 4948-4953
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2313963416
- Cited by
- 322
- References
- 1
- FWCI
- 15.64
- Type
- journal article
- Language
- en
- Open access
- closed
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- Tosun, M., Chuang, S., Fang, H., Sachid, A. B., Hettick, M., Lin, Y., Zeng, Y., & Javey, A. (2014). High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors. ACS Nano. https://doi.org/10.1021/nn5009929
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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