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Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Zhang, Mei, Wu, Juanxia, Zhu, Yiming, Dumcenco, Dumitru O., Hong, Jinhua, Mao, Nannan, Deng, Shibin, Chen, Yanfeng, Yang, Yanlian, Jin, Chuanhong, Chaki, Sunil H., Huang, Ying-Sheng, Zhang, Jin, Xie, Liming·2014·ACS Nano

Abstract

Two-dimensional transition-metal dichalcogenide alloys have attracted intense attention due to their tunable band gaps. In the present work, photoluminescence, Raman scattering, and electrical transport properties of monolayer and few-layer molybdenum tungsten diselenide alloys (Mo1-xWxSe2, 0 ≤ x ≤ 1) are systematically investigated. The strong photoluminescence emissions from Mo1-xWxSe2 monolayers indicate composition-tunable direct band gaps (from 1.56 to 1.65 eV), while weak and broad emissions from the bilayers indicate indirect band gaps. The first-order Raman modes are assigned by polarized Raman spectroscopy. Second-order Raman modes are assigned according to its frequencies. As composition changes in Mo1-xWxSe2 monolayers and few layers, the out-of-plane A1g mode showed one-mode behavior, while B2g(1) (only observed in few layers), in-plane E2g(1), and all observed second-order Raman modes showed two-mode behaviors. Electrical transport measurement revealed n-type semiconducting transport behavior with a high on/off ratio (>10(5)) for Mo1-xWxSe2 monolayers.

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Crossref · 10.1021/nn5020566

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Metadata

Authors
Zhang, M., Wu, J., Zhu, Y., Dumcenco, D. O., Hong, J., Mao, N., Deng, S., Chen, Y., Yang, Y., Jin, C., Chaki, S. H., Huang, Y.-S., Zhang, J., & Xie, L.
Venue
ACS Nano
Published
2014-06-05
Volume
8
Issue
7
Pages
7130-7137
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2312464357
Cited by
253
References
1
FWCI
10.57
Type
journal article
Language
en
Open access
closed

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