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Cited by 303

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride

Okada, Mitsuhiro, Sawazaki, Takumi, Watanabe, Kenji, Taniguch, Takashi, Hibino, Hiroki, Shinohara, Hisanori, Kitaura, Ryo·2014·ACS Nano

Abstract

Atomically thin transition metal dichalcogenides (TMDCs) have attracted considerable interest owing to the spin-valley coupled electronic structure and possibility in next-generation devices. Substrates are one of the most important factors to limit physical properties of atomic-layer materials, and among various substrates so far investigated, hexagonal boron nitride (hBN) is the best substrate to explore the intrinsic properties of atomic layers. Here we report direct chemical vapor deposition (CVD) growth of WS2 onto high-quality hBN using a 3-furnace CVD setup. Triangular-shaped WS2 grown on hBN have shown limited crystallographic orientation that is related to that of the underlying hBN. Photoluminescence spectra of the WS2 show an intense emission peak at 2.01 eV with a quite small fwhm of 26 meV. The sharp emission peak indicates the high quality of the present WS2 atomic layers with high crystallinity and clean interface.

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Metadata

Authors
Okada, M., Sawazaki, T., Watanabe, K., Taniguch, T., Hibino, H., Shinohara, H., & Kitaura, R.
Venue
ACS Nano
Published
2014-08-12
Volume
8
Issue
8
Pages
8273-8277
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2323627322
Cited by
303
References
2
FWCI
13.10
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride. https://app.cochat.ai/papers/10.1021/nn503093k
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Okada, M., Sawazaki, T., Watanabe, K., Taniguch, T., Hibino, H., Shinohara, H., & Kitaura, R. (2014). Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride. ACS Nano. https://doi.org/10.1021/nn503093k

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