The DOI matches its Crossref record; 44 of the 44 references it cites were found in a registry or an index.
Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers
Abstract
Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe2) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe2 phototransistors exhibit a very high photo gain (10(5)) and specific detectivity (10(14)Jones), values higher than commercial Si- and InGaAs-based photodetectors; however, the response speed is longer than 5 s in ambient air. In contrast, the high Schottky-contact phototransistors display a fast response time shorter than 23 ms, but the photo gain and specific detectivity decrease by several orders of magnitude. Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient air. This study demonstrates that the contact plays an important role in TMD phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity.
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Metadata
- Authors
- Zhang, W., Chiu, M.-H., Chen, C.-H., Chen, W., Li, L.-J., & Wee, A. T. S.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-08-12
- Volume
- 8
- Issue
- 8
- Pages
- 8653-8661
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2320669386
- Cited by
- 438
- References
- 44
- FWCI
- 19.36
- Type
- journal article
- Language
- en
- Open access
- closed
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