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Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2
Open accessAbstract
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. The optoelectronic properties of CVD grown monolayer MoS2 have been intensively investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS2 during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoOx species. As MoS2-δ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes nonuniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ∼ 0 V. We conclude that the electrical and optical properties of monolayer MoS2 crystals can be tuned via stoichiometry engineering to meet the requirements of various applications.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
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Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Sangwan, V. K., Jariwala, D., Kim, I. S., Chen, K.-S., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.56 · Cited by 709
Self-citationAging of Transition Metal Dichalcogenide Monolayers
Gao, J., Li, B., Tan, J., Chow, P., Lu, T.-M., & Koratkar, N. (2016) · ACS Nano · doi:10.1021/acsnano.5b07677 · Cited by 490
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures
Pierucci, D., Henck, H., Avila, J., Balan, A., Naylor, C. H., Patriarche, G., Dappe, Y. J., Silly, M. G., Sirotti, F., Johnson, A. T. C., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b00609 · Cited by 365
Metadata
- Authors
- Kim, I. S., Sangwan, V. K., Jariwala, D., Wood, J. D., Park, S., Chen, K.-S., Shi, F., Ruiz-Zepeda, F., Ponce, A., Jose-Yacaman, M., Dravid, V. P., Marks, T. J., Hersam, M. C., & Lauhon, L. J.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-09-22
- Volume
- 8
- Issue
- 10
- Pages
- 10551-10558
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2074910366
- Cited by
- 357
- References
- 2
- FWCI
- 11.76
- Type
- journal article
- Language
- en
- Open access
- hybrid
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