The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
n-Type Behavior of Graphene Supported on Si/SiO2 Substrates
Abstract
Results are presented from an experimental and theoretical study of the electronic properties of back-gated graphene field effect transistors (FETs) on Si/SiO(2) substrates. The excess charge on the graphene was observed by sweeping the gate voltage to determine the charge neutrality point in the graphene. Devices exposed to laboratory environment for several days were always found to be initially p-type. After approximately 20 h at 200 degrees C in approximately 5 x 10(-7) Torr vacuum, the FET slowly evolved to n-type behavior with a final excess electron density on the graphene of approximately 4 x 10(12) e/cm(2). This value is in excellent agreement with our theoretical calculations on SiO(2), where we have used molecular dynamics to build the SiO(2) structure and then density functional theory to compute the electronic structure. The essential theoretical result is that the SiO(2) has a significant surface state density just below the conduction band edge that donates electrons to the graphene to balance the chemical potential at the interface. An electrostatic model for the FET is also presented that produces an expression for the gate bias dependence of the carrier density.
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Citations
Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Cited by
Liu, H., Liu, Y., & Zhu, D. (2011) · J. Mater. Chem. · doi:10.1039/c0jm02922j · Cited by 1,629
Huang, X., Sheng, P., Tu, Z., Zhang, F., Wang, J., Geng, H., Zou, Y., Di, C.-A., Yi, Y., Sun, Y., et al. (2015) · Nature Communications · doi:10.1038/ncomms8408 · Cited by 855
Tunable Band Gaps in Bilayer Graphene−BN Heterostructures
Ramasubramaniam, A., Naveh, D., & Towe, E. (2011) · Nano Letters · doi:10.1021/nl1039499 · Cited by 253
Metadata
- Authors
- Romero, H. E., Shen, N., Joshi, P., Gutierrez, H. R., Tadigadapa, S. A., Sofo, J. O., & Eklund, P. C.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2008-09-30
- Volume
- 2
- Issue
- 10
- Pages
- 2037-2044
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2028230095
- Cited by
- 262
- References
- 3
- FWCI
- 9.60
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
