Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 296

The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.

Etching of Graphene Devices with a Helium Ion Beam

Open access
Lemme, Max C., Bell, David C., Williams, James R., Stern, Lewis A., Baugher, Britton W. H., Jarillo-Herrero, Pablo, Marcus, Charles M.·2009·ACS Nano

Abstract

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1021/nn900744z

Cites

15 of 15 references verified0 citation errors · 0 not checkable

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cites

Show all 15 references

Cited by

See all 296

Metadata

Authors
Lemme, M. C., Bell, D. C., Williams, J. R., Stern, L. A., Baugher, B. W. H., Jarillo-Herrero, P., & Marcus, C. M.
Venue
ACS Nano
Published
2009-09-22
Volume
3
Issue
9
Pages
2674-2676
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W1902346400
Cited by
296
References
15
FWCI
7.50
Type
journal article
Language
en
Open access
green

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Etching of Graphene Devices with a Helium Ion Beam. https://app.cochat.ai/papers/10.1021/nn900744z
The paper
Lemme, M. C., Bell, D. C., Williams, J. R., Stern, L. A., Baugher, B. W. H., Jarillo-Herrero, P., & Marcus, C. M. (2009). Etching of Graphene Devices with a Helium Ion Beam. ACS Nano. https://doi.org/10.1021/nn900744z

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.