The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
Open accessAbstract
Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p–n junctions are fabricated in ultrathin MoS 2 by introducing AuCl 3 and benzyl viologen dopants. Unlike usual unipolar MoS 2, the MoS 2 p–n junctions show ambipolar carrier transport, current rectification via modulation of potential barrier in films thicker than 8 nm and reversed current rectification via tunnelling in films thinner than 8 nm. The ultimate thinness of the vertical p–n homogeneous junctions in MoS 2 is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS 2 p–n junctions present a significant potential of the two-dimensional crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Atomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
Design strategies for two‐dimensional material photodetectors to enhance device performance
Wang, J., Han, J., Chen, X., & Wang, X. (2019) · InfoMat · doi:10.1002/inf2.12004 · Cited by 268
Metadata
- Authors
- Li, H.-M., Lee, D., Qu, D., Liu, X., Ryu, J., Seabaugh, A., & Yoo, W. J.
- Venue
- Nature Communications
- Published
- 2015-03-24
- Volume
- 6
- Issue
- 1
- Pages
- 6564-6564
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2020417695
- Cited by
- 353
- References
- 3
- FWCI
- 14.52
- Type
- journal article
- Language
- en
- Open access
- gold
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