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Cited by 223

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Single-step deposition of high-mobility graphene at reduced temperatures

Open access
Boyd, D.A., Lin, W.-H., Hsu, C.-C., Teague, M.L., Chen, C.-C., Lo, Y.-Y., Chan, W.-Y., Su, W.-B., Cheng, T.-C., Chang, C.-S., Wu, C.-I., Yeh, N.-C.·2015·Nature Communications

Abstract

Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room-temperature electrical mobility up to (6.0±1.0) × 10(4) cm(2) V(-1) s(-1), better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.

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Crossref · 10.1038/ncomms7620

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Metadata

Authors
Boyd, D. A., Lin, W.-H., Hsu, C.-C., Teague, M. L., Chen, C.-C., Lo, Y.-Y., Chan, W.-Y., Su, W.-B., Cheng, T.-C., Chang, C.-S., Wu, C.-I., & Yeh, N.-C.
Venue
Nature Communications
Published
2015-03-18
Volume
6
Issue
1
Pages
6620-6620
ISSN
2041-1723 (ISSN-L)
OpenAlex
W2129060454
Cited by
223
References
1
FWCI
13.59
Type
journal article
Language
en
Open access
gold

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