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Synthesis of large-area multilayer hexagonal boron nitride for high material performance
Open accessAbstract
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm 2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO 2/Si substrate for a MoS 2 (WSe 2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Shi, J., Ma, D., Han, G.-F., Zhang, Y., Ji, Q., Gao, T., Sun, J., Song, X., Li, C., Zhang, Y., et al. (2014) · ACS Nano · doi:10.1021/nn503211t · Cited by 459
Cited by
Cai, Z., Liu, B., Zou, X., & Cheng, H.-M. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00536 · Cited by 1,495
Mechanical properties of atomically thin boron nitride and the role of interlayer interactions
Falin, A., Cai, Q., Santos, E. J. G., Scullion, D., Qian, D., Zhang, R., Yang, Z., Huang, S., Watanabe, K., Taniguchi, T., et al. (2017) · Nature Communications · doi:10.1038/ncomms15815 · Cited by 932
Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride
Roy, S., Zhang, X., Puthirath, A. B., Meiyazhagan, A., Bhattacharyya, S., Rahman, M. M., Babu, G., Susarla, S., Saju, S. K., Tran, M. K., et al. (2021) · Advanced Materials · doi:10.1002/adma.202101589 · Cited by 871
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits
Bie, Y.-Q., Grosso, G., Heuck, M., Furchi, M. M., Cao, Y., Zheng, J., Bunandar, D., Navarro-Moratalla, E., Zhou, L., Efetov, D. K., et al. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.209 · Cited by 465
Self-citationA Review of the Synthesis, Properties, and Applications of 2D Materials
Shanmugam, V., Mensah, R. A., Babu, K., Gawusu, S., Chanda, A., Tu, Y., Neisiany, R. E., Försth, M., Sas, G., & Das, O. (2022) · Particle & Particle Systems Characterization · doi:10.1002/ppsc.202200031 · Cited by 432
Metadata
- Authors
- Kim, S. M., Hsu, A., Park, M. H., Chae, S. H., Yun, S. J., Lee, J. S., Cho, D.-H., Fang, W., Lee, C., Palacios, T., Dresselhaus, M., Kim, K. K., Lee, Y. H., & Kong, J.
- Venue
- Nature Communications
- Published
- 2015-10-28
- Volume
- 6
- Issue
- 1
- Pages
- 8662-8662
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2269429031
- Cited by
- 563
- References
- 2
- FWCI
- 18.65
- Type
- journal article
- Language
- en
- Open access
- gold
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- Kim, S. M., Hsu, A., Park, M. H., Chae, S. H., Yun, S. J., Lee, J. S., Cho, D.-H., Fang, W., Lee, C., Palacios, T., Dresselhaus, M., Kim, K. K., Lee, Y. H., & Kong, J. (2015). Synthesis of large-area multilayer hexagonal boron nitride for high material performance. Nature Communications. https://doi.org/10.1038/ncomms9662
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