The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
A ferroelectric memristor
Open accessAbstract
Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth, we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · cited 1×
“Figure 4a–c (4d–f) also shows the fit of the experimental data by equation (2) (equation (1)) for negative (respectively, positive) applied voltage with amplitude 2.”
BackgroundNanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174 · cited 4×
“The nonlinear resistance R depends on V , t and σ that varies over time as described in equation (4).”
BackgroundInfluentialMemristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Memristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Cited by
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., & Strukov, D. B. (2015) · Nature · doi:10.1038/nature14441 · Cited by 3,001
Memory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“Cumulative change of resistance has been adopted for analogue synapses in artificial neural networks using both filamentary 67–69 and interface-switching RRAM devices 70 , as well as ferroelectric devices 71 and domain-wall STT-MRAM devices 72 .”
MethodSynaptic electronics: materials, devices and applications
Kuzum, D., Yu, S., & Philip Wong, H.-S. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/38/382001 · Cited by 1,258
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Metadata
- Authors
- Chanthbouala, A., Garcia, V., Cherifi, R. O., Bouzehouane, K., Fusil, S., Moya, X., Xavier, S., Yamada, H., Deranlot, C., Mathur, N. D., Bibes, M., Barthélémy, A., & Grollier, J.
- Venue
- Nature Materials
- Published
- 2012-09-16
- Volume
- 11
- Issue
- 10
- Pages
- 860-864
- ISSN
- 1476-1122 (ISSN-L)
- 1476-4660
- OpenAlex
- W2094325813
- Cited by
- 1,220
- References
- 6
- FWCI
- 35.00
- Type
- journal article
- Language
- en
- Open access
- green
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- Chanthbouala, A., Garcia, V., Cherifi, R. O., Bouzehouane, K., Fusil, S., Moya, X., Xavier, S., Yamada, H., Deranlot, C., Mathur, N. D., Bibes, M., Barthélémy, A., & Grollier, J. (2012). A ferroelectric memristor. Nature Materials. https://doi.org/10.1038/nmat3415
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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