The DOI matches its Crossref record; 23 of the 23 references it cites were found in a registry or an index.
Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system
Open accessAbstract
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer, where the spin Hall effect in the NM is responsible for the switching. Here we show that an antiferromagnet/ferromagnet (AFM/FM) bilayer system also exhibits a SOT large enough to switch the magnetization of FM. In this material system, thanks to the exchange-bias effect of the AFM, we observe the switching under no applied field by using an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with a perpendicular easy axis. Furthermore, tailoring the stack achieves a memristor-like behaviour where a portion of the reversed magnetization can by controlled in an analogue manner. The AFM/FM system is thus a promising building block for SOT devices as well as providing an attractive pathway towards neuromorphic computing.
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Cites
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Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
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Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
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Cited by
Baltz, V., Manchon, A., Tsoi, M., Moriyama, T., Ono, T., & Tserkovnyak, Y. (2018) · Reviews of Modern Physics · doi:10.1103/revmodphys.90.015005 · Cited by 2,698
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Wang, M., Cai, W., Zhu, D., Wang, Z., Kan, J., Zhao, Z., Cao, K., Wang, Z., Zhang, Y., Zhang, T., et al. (2018) · Nature Electronics · doi:10.1038/s41928-018-0160-7 · Cited by 482
Spin transport and spin torque in antiferromagnetic devices
Železný, J., Wadley, P., Olejník, K., Hoffmann, A., & Ohno, H. (2018) · Nature Physics · doi:10.1038/s41567-018-0062-7 · Cited by 454
Self-citation2022 roadmap on neuromorphic computing and engineering
Christensen, D. V., Dittmann, R., Linares-Barranco, B., Sebastian, A., Le Gallo, M., Redaelli, A., Slesazeck, S., Mikolajick, T., Spiga, S., Menzel, S., et al. (2022) · Neuromorphic Computing and Engineering · doi:10.1088/2634-4386/ac4a83
Metadata
- Authors
- Fukami, S., Zhang, C., DuttaGupta, S., Kurenkov, A., & Ohno, H.
- Venue
- Nature Materials
- Published
- 2016-02-15
- Volume
- 15
- Issue
- 5
- Pages
- 535-541
- ISSN
- 2331-8422 (ISSN-L)
- 1476-1122
- 1476-4660
- OpenAlex
- W811376922
- Cited by
- 960
- References
- 23
- Type
- posted content
- Language
- en
- Open access
- green
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- Fukami, S., Zhang, C., DuttaGupta, S., Kurenkov, A., & Ohno, H. (2016). Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system. Nature Materials. https://doi.org/10.1038/nmat4566
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