CoChat
Sign Up
Cited by 265Semiconductor materials and devicesAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

The DOI matches its Crossref record.

Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

Lee, Jang-Sik, Cho, Jinhan, Lee, Chiyoung, Kim, Inpyo, Park, Jeongju, Kim, Yong-Mu, Shin, Hyunjung, Lee, Jaegab, Caruso, Frank·2007·Nature Nanotechnology
DOI 10.1038/nnano.2007.380
Open this paper in CoChat — free account

Abstract

We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top contact was formed by depositing HfO2 and platinum. In this study, we investigated the effect of increasing the number of polyelectrolyte and gold nanoparticle layers on memory performance, including the size of the memory window (the critical voltage difference between the 'programmed' and 'erased' states of the devices) and programming speed. We observed a maximum memory window of about 1.8 V, with a stored electron density of 4.2 x 1012 cm-2 in the gold nanoparticle layers, when the devices consist of three polyelectrolyte/gold nanoparticle layers. The reported approach offers new opportunities to prepare nanostructured polyelectrolyte/gold nanoparticle-based memory devices with tailored performance.

Overview

Integrity signals

Registry

Crossref · 10.1038/nnano.2007.380

Cites

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • The charge trap memristor mechanism is identical to charge-trap flash memory, in which reversible charge trapping and de-trapping to the charge trap layer alter the threshold voltage of the transistor.

    “The CTM mechanism is identical to the charge‐trap flash (CTF) memory, in which reversible charge trapping and de‐trapping to the charge trap layer alter the threshold voltage of the transistor.[ 14 , 15 , 16 ]”

    From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [15]

Citations

Cites

No references could be resolved yet.

Research works printed but not linked: 38

  1. Wann, H. C. & Hu, C. High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application. IEEE Electron. Dev. Lett. 16, 491–493 (1995). · DOI
  2. White, M. H., Adams, D. A. & Bu, J. On the go with SONOS. IEEE Circuits Dev. 16, 22–31 (2000). · DOI
  3. De Blauwe, J. Nanocrystal nonvolatile memory devices. IEEE Trans. Nanotech. 1, 72–77 (2002). · DOI
  4. Park, Y. et al. Highly manufacturable 32 Gb multi-level NAND flash memory with 0.0098 μm2 cell size using TANOS (Si-Oxide-Al2O3-TaN) cell technology. IEEE International Electron Devices Meeting (IEDM), December 11–13, 2.1 (San Francisco, California, 2006). http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=4139311&arnumber=4154319&count=284&index=156 .
  5. Liu, Z., Lee, C., Narayanan, V., Pei, G. & Kan, E. C. Metal nanocrystal memories — Part I: Device design and fabrication. IEEE Trans. Electron. Dev. 49, 1606–1613 (2002). · DOI
  6. Hanafi, H. I., Tiwari, S. & Khan, I. Fast and long retention-time nano-crystal memory. IEEE Trans. Electron. Dev. 43, 1553–1558 (1996). · DOI
  7. Decher, G. Fuzzy nanoassemblies: toward layered polymeric multicomposites. Science 277, 1232–1237 (1997). · DOI
  8. Cho, J., Quinn, J. F. & Caruso, F. Fabrication of polyelectrolyte multilayer films comprising nanoblended layers. J. Am. Chem. Soc. 126, 2270–2271 (2004). · DOI
  9. Cho, J., Hong, J., Char, K. & Caruso, F. Nanoporous block copolymer micelle/micelle multilayer films with dual optical properties. J. Am. Chem. Soc. 128, 9935–9942 (2006). · DOI
  10. Cho, J. & Caruso, F. Investigation of the interactions between ligand-stabilized gold nanoparticles and polyelectrolyte multilayer films. Chem. Mater. 17, 4547–4553 (2005). · DOI
  11. Cho, J. & Caruso, F. Polymeric multilayer films comprising deconstructible hydrogen-bonded stacks confined between electrostatically assembled layers. Macromolecules 36, 2845–2851 (2003). · DOI
  12. Quinn, J. F., Johnston, A. P. R., Such, G., Zelikin, A. N. & Caruso, F. Next-generation, sequentially assembled ultrathin films: beyond electrostatics. Chem. Soc. Rev. 36, 707–718 (2007). · DOI
  13. Caruso, F., Caruso, R. A. & Möwald, H. Nanoengineering of inorganic and hybrid hollow spheres by colloidal templating. Science 282, 1111–1114 (1998). · DOI
  14. Ouyang, J., Chu, C.-W., Szmanda, C. R., Ma, L. & Yang, Y. Programmable polymer thin film and non-volatile memory device. Nature Mater. 3, 918–922 (2004). · DOI
  15. Tseng, R. J., Huang, J., Ouyang, J., Kaner, R. B. & Yang, Y. Polyaniline nanofiber/gold nanoparticle nonvolatile memory. Nano Lett. 5, 1077–1080 (2005). · DOI
  16. Yang, Y., Ouyang, J., Ma, L., Tseng, R. J.-H. & Chu, C.-W. Electrical switching and bistability in organic/polymeric thin films and memory devices. Adv. Funct. Mater. 16, 1001–1014 (2006). · DOI
  17. Tan, Z., Samanta, S. K., Yoo, W. J. & Lee, S. Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application. Appl. Phys. Lett. 86, 013107 (2005). · DOI
  18. Yeh, P. H. et al. Low-power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer. Appl. Phys. Lett. 87, 193504 (2005). · DOI
  19. Yang, F. M. et al. Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide. Appl. Phys. Lett. 90, 132102 (2007). · DOI
  20. Jaramillo, T. F., Baeck, S.-H., Cuenya, B. R. & McFarland, E. W. Catalytic activity of supported Au nanoparticles deposited from block copolymer micelles. J. Am. Chem. Soc. 125, 7148–7149 (2003). · DOI
  21. Naitabdi, A., Ono, L. K. & Cuenya, B. R. Local investigation of the electronic properties of size-selected Au nanoparticles by scanning tunneling spectroscopy. Appl. Phys. Lett. 89, 043101 (2006). · DOI
  22. Ha, T. H., Koo, H.-J. & Chung, B. H. Shape-controlled synthesis of gold nanoprisms and nanorods influenced by specific adsorption of halide ions. J. Phys. Chem. 111, 1123–1130 (2007). · DOI
  23. Cho, J., Char, K., Hong, J.-D. & Lee, K.-B. Fabrication of highly ordered multilayer films using a spin self-assembly method. Adv. Mater. 13, 1076–1078 (2001). · DOI
  24. Cho, J. & Char, K. Effect of layer integrity of spin self-assembled multilayer films on surface wettability. Langmuir 20, 4011–4016 (2004). · DOI
  25. Cho, J. et al. Effect of layer integrity of spin self-assembled multilayer films on surface wettability. Langmuir 22, 1356–1364 (2004). · DOI
  26. Cho, J. et al. Quantitative analysis on the adsorbed amount and structural characteristics of spin-assembled multilayer films. Polymer 44, 5455–5459 (2003). · DOI
  27. Durstock, M. F. & Rubner, M. F. Dielectric properties of polyelectrolyte multilayers. Langmuir 17, 7865–7872 (2001). · DOI
  28. Cho, Y., Kazuta, S. & Matsuura, K. Scanning nonlinear dielectric microscopy with nanometer resolution. Appl. Phys. Lett. 75, 2833–2835 (1999). · DOI
  29. Cho, Y., Kirihara, A. & Saeki, T. Scanning nonlinear dielectric microscope. Rev. Sci. Instrum. 67, 2297–2303 (1996). · DOI
  30. Lee, J.-S. et al. Data retention characteristics of nitride-based charge trap memory devices with high-k dielectrics and high-work-function metal gates for multi-gigabit flash memory. Jpn J. Appl. Phys. 45, 3213–3216 (2006). · DOI
  31. Corbierre, M. K. et al. Polymer-stabilized gold nanoparticles and their incorporation into polymer matrices. J. Am. Chem. Soc. 123, 10411–10412 (2001). · DOI
  32. Yamagata, Y. & Shiratori, S. Evaluation of electrical characteristics of the layer-by-layer self-assembled films after the various annealing temperatures. Thin Solid Films 438, 238–242 (2003). · DOI
  33. Köhler, K., Möhwald, H. & Sukhorukov, G. B. Thermal behavior of polyelectrolyte multilayer microcapsules: 2. Insight into molecular mechanisms for the PDADMAC/PSS system. J. Phys. Chem. B 110, 24002–24010 (2006). · DOI
  34. Wang, X., Liu, J., Bai, W. & Kwong, D.-L. A novel MONOS-type nonvolatile memory using high-k dielectrics for improved data retention and programming speed. IEEE Trans. Electron. Dev. 51, 597–602 (2004). · DOI
  35. Tan, Y. N., Chim, W. K., Choi, W. K., Joo, M. S. & Cho, B. J. Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Trans. Electron. Dev. 53, 654–662 (2006). · DOI
  36. Lee, C. H., Park, K. C. & Kim, K. Charge-trapping memory cell of SiO2/SiN/high-k dielectric Al2O3 with TaN metal gate for suppressing backward-tunneling effect. Appl. Phys. Lett. 87, 073510 (2005). · DOI
  37. Grabar, K. C., Freeman, R. G., Hommer, M. B. & Natan, M. J. Preparation and characterization of Au colloid monolayers. Anal. Chem. 67, 735–743 (1995). · DOI
  38. Buttry, D. Advances in Electroanalytical Chemistry: Applications of the QCM to Electrochemistry, A series (Marcel Dekker, New York, 1991).

Cited by

Sorted by citations

Metadata

Authors
Lee, J.-S., Cho, J., Lee, C., Kim, I., Park, J., Kim, Y.-M., Shin, H., Lee, J., & Caruso, F.
Affiliations
  • Kookmin University (KR)
  • The University of Melbourne (AU)
Corresponding author
  • Lee, Jang-Sik
  • Cho, Jinhan
ORCID
Venue
Nature Nanotechnology
Publisher
Springer Science and Business Media LLC
Published
2007-12
Volume
2
Issue
12
Pages
790-795
ISSN
  • 1748-3387 (ISSN-L)
  • 1748-3395
DOI
10.1038/nnano.2007.380
OpenAlex
W2059253033
Cited by
265
References
0
Citations by year
2026: 1 · 2025: 3 · 2024: 4 · 2023: 7 · 2022: 2 · 2021: 7 · 2020: 14 · 2019: 16 · 2018: 24 · 2017: 14 · 2016: 12 · 2015: 20 · 2014: 13 · 2013: 23 · 2012: 25
FWCI
18.58
Type
journal article
Language
en
Open access
closed
Licence
www.springer.com/tdm (tdm)
Locations
  • Nature Nanotechnology (publishedVersion)
  • PubMed (publishedVersion)
Funders
Australian Research Council
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Keywords
charge trap flash memory, polyelectrolyte multilayers, gold nanoparticles, polyallylamine, polystyrene sulfonate, hafnium oxide, memory window, programming speed, layer-by-layer assembly
MeSH terms
Crystallization, Electronics, Equipment Design, Gold, Ions, Signal Processing, Computer-Assisted, Information Storage and Retrieval, Equipment Failure Analysis, Nanotechnology, Nanostructures

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review