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Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
Open accessAbstract
Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery of a large enhancement in photoluminescence quantum efficiency and a potential route to valleytronics in atomically thin layers of transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to the indirect-to-direct bandgap transition in monolayers. Here, we report the first direct observation of the transition from indirect to direct bandgap in monolayer samples by using angle-resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy. The band structure measured experimentally indicates a stronger tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap size, than theoretically predicted. Moreover, our finding of a significant spin-splitting of ∼ 180 meV at the valence band maximum of a monolayer MoSe2 film could expand its possible application to spintronic devices.
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Cited by
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Quantum spin Hall state in monolayer 1T'-WTe2
Tang, S., Zhang, C., Wong, D., Pedramrazi, Z., Tsai, H.-Z., Jia, C., Moritz, B., Claassen, M., Ryu, H., Kahn, S., et al. (2017) · Nature Physics · doi:10.1038/nphys4174 · Cited by 846
Self-citationLiu, G.-B., Xiao, D., Yao, Y., Xu, X., & Yao, W. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00301b · Cited by 698
Xia, J., Huang, X., Liu, L.-Z., Wang, M., Wang, L., Huang, B., Zhu, D.-D., Li, J.-J., Gu, C.-Z., & Meng, X.-M. (2014) · Nanoscale · doi:10.1039/c4nr02311k · Cited by 468
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Metadata
- Authors
- Zhang, Y., Chang, T.-R., Zhou, B., Cui, Y.-T., Yan, H., Liu, Z., Schmitt, F., Lee, J., Moore, R., Chen, Y., Lin, H., Jeng, H.-T., Mo, S.-K., Hussain, Z., Bansil, A., & Shen, Z.-X.
- Venue
- Nature Nanotechnology
- Published
- 2013-12-22
- Volume
- 9
- Issue
- 2
- Pages
- 111-115
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2101787945
- Cited by
- 1,376
- References
- 5
- FWCI
- 34.34
- Type
- journal article
- Language
- en
- Open access
- green
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- Zhang, Y., Chang, T.-R., Zhou, B., Cui, Y.-T., Yan, H., Liu, Z., Schmitt, F., Lee, J., Moore, R., Chen, Y., Lin, H., Jeng, H.-T., Mo, S.-K., Hussain, Z., Bansil, A., & Shen, Z.-X. (2014). Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nature Nanotechnology. https://doi.org/10.1038/nnano.2013.277
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