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Cited by 299

The DOI matches its Crossref record; 28 of the 28 references it cites were found in a registry or an index.

On the degradation mechanisms of quantum-dot light-emitting diodes

Open access
Chen, Song, Cao, Weiran, Liu, Taili, Tsang, Sai-Wing, Yang, Yixing, Yan, Xiaolin, Qian, Lei·2019·Nature Communications

Abstract

The operating lifetime of blue quantum-dot light-emitting diodes (QLED) is currently a short slab for this emerging display technology. To pinpoint the origin of device degradation, here we apply multiple techniques to monitor the electric-field distribution and space-charge accumulation across the multilayered structure before and after lifetime tests. Evident by charge-modulated electro-absorption and capacitance-voltage characteristics, the excited electrons in blue quantum dots (QD) are prone to cross the type II junction between the QD emission layer and the electron-transporting layer (ETL) due to the offset of conduction band minimum, leading to space-charge accumulation and operating-voltage rise in the ETL. Therefore, unlike those very stable red devices, of which the lifetime is primarily limited by the slow degradation of hole-transporting layer, the poor lifetime of blue QLED originates from the fast degradation at the QD-ETL junction. Materials engineering for efficient electron injection is prerequisite for the boost of operating lifetime.

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Metadata

Authors
Chen, S., Cao, W., Liu, T., Tsang, S.-W., Yang, Y., Yan, X., & Qian, L.
Venue
Nature Communications
Published
2019-02-15
Volume
10
Issue
1
Pages
765-765
ISSN
2041-1723 (ISSN-L)
OpenAlex
W2913875262
Cited by
299
References
28
FWCI
10.94
Type
journal article
Language
en
Open access
gold

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Chen, S., Cao, W., Liu, T., Tsang, S.-W., Yang, Y., Yan, X., & Qian, L. (2019). On the degradation mechanisms of quantum-dot light-emitting diodes. Nature Communications. https://doi.org/10.1038/s41467-019-08749-2

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