The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Electrical control of 2D magnetism in bilayer CrI3
Open accessAbstract
Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions1–3, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy4–6. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction2,4,7–9. Owing to their unique magnetic properties10–14, the recently reported two-dimensional magnets provide a new system for studying these features15–19. For instance, a bilayer of chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition15,16. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.Electrical control of magnetism in a bilayer of CrI3 enables the realization of an electrically driven magnetic phase transition and the observation of the magneto-optical Kerr effect in 2D magnets.
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Cites
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Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
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Self-citationDiscovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals
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Direct observation of a widely tunable bandgap in bilayer graphene
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Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures
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Cited by
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
Deng, Y., Yu, Y., Song, Y., Zhang, J., Wang, N. Z., Sun, Z., Yi, Y., Wu, Y. Z., Wu, S., Zhu, J., et al. (2018) · Nature · doi:10.1038/s41586-018-0626-9 · Cited by 2,619
Van der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride
Roy, S., Zhang, X., Puthirath, A. B., Meiyazhagan, A., Bhattacharyya, S., Rahman, M. M., Babu, G., Susarla, S., Saju, S. K., Tran, M. K., et al. (2021) · Advanced Materials · doi:10.1002/adma.202101589 · Cited by 871
Stacking-Dependent Magnetism in Bilayer CrI3
Sivadas, N., Okamoto, S., Xu, X., Fennie, C. J., & Xiao, D. (2018) · Nano Letters · doi:10.1021/acs.nanolett.8b03321 · Cited by 698
Self-citationDirect observation of van der Waals stacking–dependent interlayer magnetism
Chen, W., Sun, Z., Wang, Z., Gu, L., Xu, X., Wu, S., & Gao, C. (2019) · Science · doi:10.1126/science.aav1937 · Cited by 585
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Metadata
- Authors
- Huang, B., Clark, G., Klein, D. R., MacNeill, D., Navarro-Moratalla, E., Seyler, K. L., Wilson, N., McGuire, M. A., Cobden, D. H., Xiao, D., Yao, W., Jarillo-Herrero, P., & Xu, X.
- Venue
- Nature Nanotechnology
- Published
- 2018-04-23
- Volume
- 13
- Issue
- 7
- Pages
- 544-548
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2788044113
- Cited by
- 1,362
- References
- 29
- FWCI
- 73.38
- Type
- journal article
- Language
- en
- Open access
- green
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