The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Ferroelectric switching of a two-dimensional metal
Open accessAbstract
A ferroelectric is a material with a polar structure whose polarity can be reversed (switched) by applying an electric field1,2. In metals, itinerant electrons screen electrostatic forces between ions, which explains in part why polar metals are very rare3–7. Screening also excludes external electric fields, apparently ruling out the possibility of ferroelectric switching. However, in principle, a thin enough polar metal could be sufficiently penetrated by an electric field to have its polarity switched. Here we show that the topological semimetal WTe2 provides an embodiment of this principle. Although monolayer WTe2 is centro-symmetric and thus non-polar, the stacked bulk structure is polar. We find that two- or three-layer WTe2 exhibits spontaneous out-of-plane electric polarization that can be switched using gate electrodes. We directly detect and quantify the polarization using graphene as an electric-field sensor8. Moreover, the polarization states can be differentiated by conductivity and the carrier density can be varied to modify the properties. The temperature at which polarization vanishes is above 350 kelvin, and even when WTe2 is sandwiched between graphene layers it retains its switching capability at room temperature, demonstrating a robustness suitable for applications in combination with other two-dimensional materials9–12. Two- and three-layer WTe2 exhibits spontaneous out-of-plane electric polarization that can be switched electrically at room temperature and is sufficiently robust for use in applications with other two-dimensional materials.
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Cites
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Huang, B., Clark, G., Navarro-Moratalla, E., Klein, D. R., Cheng, R., Seyler, K. L., Zhong, D., Schmidgall, E., McGuire, M. A., Cobden, D. H., et al. (2017) · Nature · doi:10.1038/nature22391 · Cited by 5,926
Self-citationApplications of Modern Ferroelectrics
Scott, J. F. (2007) · Science · doi:10.1126/science.1129564 · Cited by 3,258
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Cited by
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Two-dimensional materials for next-generation computing technologies
Liu, C., Chen, H., Wang, S., Liu, Q., Jiang, Y.-G., Zhang, D. W., Liu, M., & Zhou, P. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0724-3 · Cited by 1,045
Pham, P. V., Bodepudi, S. C., Shehzad, K., Liu, Y., Xu, Y., Yu, B., & Duan, X. (2022) · Chemical Reviews · doi:10.1021/acs.chemrev.1c00735 · Cited by 708
Liu, K., Zhang, T., Dang, B., Bao, L., Xu, L., Cheng, C., Yang, Z., Huang, R., & Yang, Y. (2022) · Nature Electronics · doi:10.1038/s41928-022-00847-2 · Cited by 498
Recent Progress in Two‐Dimensional Ferroelectric Materials
Guan, Z., Hu, H., Shen, X., Xiang, P., Zhong, N., Chu, J., & Duan, C. (2020) · Advanced Electronic Materials · doi:10.1002/aelm.201900818 · Cited by 409
Metadata
- Authors
- Fei, Z., Zhao, W., Palomaki, T. A., Sun, B., Miller, M. K., Zhao, Z., Yan, J., Xu, X., & Cobden, D. H.
- Venue
- Nature
- Published
- 2018-07-23
- Volume
- 560
- Issue
- 7718
- Pages
- 336-339
- ISSN
- 0028-0836 (ISSN-L)
- 1476-4687
- OpenAlex
- W2883933020
- Cited by
- 1,040
- References
- 30
- FWCI
- 23.86
- Type
- journal article
- Language
- en
- Open access
- green
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