The DOI matches its Crossref record; 42 of the 42 references it cites were found in a registry or an index.
Tunable and sizable band gap in silicene by surface adsorption
Open accessAbstract
Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10(8). Therefore, a way is paved for silicene as the channel of a high-performance FET.
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Cited by
Two-dimensional transistors beyond graphene and TMDCs
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Metadata
- Authors
- Quhe, R., Fei, R., Liu, Q., Zheng, J., Li, H., Xu, C., Ni, Z., Wang, Y., Yu, D., Gao, Z., & Lu, J.
- Venue
- Scientific Reports
- Published
- 2012-11-14
- Volume
- 2
- Issue
- 1
- Pages
- 853-853
- ISSN
- 2045-2322 (ISSN-L)
- OpenAlex
- W2009029869
- Cited by
- 295
- References
- 42
- FWCI
- 12.16
- Type
- journal article
- Language
- en
- Open access
- gold
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- Quhe, R., Fei, R., Liu, Q., Zheng, J., Li, H., Xu, C., Ni, Z., Wang, Y., Yu, D., Gao, Z., & Lu, J. (2012). Tunable and sizable band gap in silicene by surface adsorption. Scientific Reports. https://doi.org/10.1038/srep00853
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