The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
Open accessAbstract
Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS2, WS2, WSe2 and MoSe2 exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts, sensors and valleytronic components. Unfortunately, the direct band gap only occurs for mono-layered STMD. We have found, using first principles calculations, that by alternating individual layers of different STMD (MoS2, WS2, WSe2 and MoSe2) with particular stackings, it is possible to generate direct band gap bi-layers ranging from 0.79 eV to 1.157 eV. Interestingly, in this direct band gap, electrons and holes are physically separated and localized in different layers. We foresee that the alternation of different STMD would result in the fabrication of materials with unprecedented optical and physico-chemical properties that would need further experimental and theoretical investigations.
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Cites
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Schaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652
Lv, R., Robinson, J. A., Schaak, R. E., Sun, D., Sun, Y., Mallouk, T. E., & Terrones, M. (2015) · Accounts of Chemical Research · doi:10.1021/ar5002846 · Cited by 1,380
Self-citationDuan, X., Wang, C., Pan, A., Yu, R., & Duan, X. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00507h · Cited by 1,161
Liu, G.-B., Xiao, D., Yao, Y., Xu, X., & Yao, W. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00301b · Cited by 698
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Metadata
- Authors
- Terrones, H., López-Urías, F., & Terrones, M.
- Venue
- Scientific Reports
- Published
- 2013-03-26
- Volume
- 3
- Issue
- 1
- Pages
- 1549-1549
- ISSN
- 2045-2322 (ISSN-L)
- OpenAlex
- W2031378143
- Cited by
- 527
- References
- 2
- FWCI
- 26.64
- Type
- journal article
- Language
- en
- Open access
- gold
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- Terrones, H., López-Urías, F., & Terrones, M. (2013). Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides. Scientific Reports. https://doi.org/10.1038/srep01549
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