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Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)

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Liu, Ming, Hoffman, Jason, Wang, Jing, Zhang, Jinxing, Nelson-Cheeseman, Brittany, Bhattacharya, Anand·2013·Scientific Reports

Abstract

A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

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Metadata

Authors
Liu, M., Hoffman, J., Wang, J., Zhang, J., Nelson-Cheeseman, B., & Bhattacharya, A.
Venue
Scientific Reports
Published
2013-05-23
Volume
3
Issue
1
Pages
1876-1876
ISSN
2045-2322 (ISSN-L)
OpenAlex
W2086641240
Cited by
163
References
0
FWCI
7.18
Type
journal article
Language
en
Open access
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CoChat. (2026). Citation check: Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011). https://app.cochat.ai/papers/10.1038/srep01876
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Liu, M., Hoffman, J., Wang, J., Zhang, J., Nelson-Cheeseman, B., & Bhattacharya, A. (2013). Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011). Scientific Reports. https://doi.org/10.1038/srep01876

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