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Cited by 234

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Covalency in semiconductor quantum dots

R. Heath, James·1998·Chemical Society Reviews

Abstract

Chemical schemes for the preparation of direct band-gap semiconductor quantum dots have advanced rapidly over the past few years. It is now possible to prepare a variety of III–V semiconductors with a finite size (InP, InAs, GaAs, etc.) and compare their size-dependent properties with the well studied II–VI class of quantum dots (ZnS, CdS, CdSe, etc.). In this Reviews, various physical properties of semiconductor quantum dots are presented within a discussion framework of lattice covalency. Included in the Reviews are discussions of the various chemical synthetic routes for making the particles, as well the electronic structure and the electronic dynamics of nanocrystals.

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Metadata

Authors
R. Heath, J.
Venue
Chemical Society Reviews
Published
1998
Volume
27
Issue
1
Pages
65
ISSN
  • 0306-0012 (ISSN-L)
  • 1460-4744
OpenAlex
W2111391981
Cited by
234
References
1
FWCI
0.64
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Covalency in semiconductor quantum dots. https://app.cochat.ai/papers/10.1039/a827065z
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R. Heath, J. (1998). Covalency in semiconductor quantum dots. Chemical Society Reviews. https://doi.org/10.1039/a827065z

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