Designing band gap of graphene by B and N dopant atoms

Abstract

Ab initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheets. The effect of doping has been investigated by varying the concentrations of dopants from 2% (one atom of the dopant in 50 host atoms) to 12% (six dopant atoms in 50 atoms host atoms) and also by considering different doping sites for the same concentration of substitutional doping. All of the calculations have been performed using VASP (Vienna Ab initio Simulation Package) based on density functional theory. By B and N doping, p-type and n-type doping are induced, respectively, in the graphene sheet. While the planar structure of the graphene sheet remains unaffected on doping, the electronic properties change from semi-metal to semiconductor with increasing number of dopants. It has been observed that isomers formed by choosing different doping sites differ significantly in the stability, bond length and band gap introduced. The band gap is found to be at a maximum when dopants are placed at same sublattice points of graphene due to the combined effect of symmetry breaking of sublattices and the band gap is closed when dopants are placed at adjacent positions (alternate sublattice positions). These interesting results provide the possibility of tuning the band gap of graphene as required and its application in electronic devices, such as replacements to Pt-based catalysts in Polymer Electrolytic Fuel Cells (PEFCs).