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Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors
Open accessAbstract
By using first-principles calculations, we predict that a sizable band gap can be opened at the Dirac point of silicene without degrading silicene's electronic properties with n-type doping by Cu, Ag, and Au adsorption, p-type doping by Ir adsorption, and neutral doping by Pt adsorption. A silicene p-i-n tunneling field effect transistor (TFET) model is designed by the adsorption of different transition metal atoms on different regions of silicene. Quantum transport simulations demonstrate that silicene TFETs have an on-off ratio of 10(3), a small sub-threshold swing of 77 mV dec(-1), and a large on-state current of over 1 mA μm(-1) under a supply voltage of about 1.7 V.
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Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Cited by
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Metadata
- Authors
- Ni, Z., Zhong, H., Jiang, X., Quhe, R., Luo, G., Wang, Y., Ye, M., Yang, J., Shi, J., & Lu, J.
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2014
- Volume
- 6
- Issue
- 13
- Pages
- 7609-7618
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W1997270927
- Cited by
- 170
- References
- 2
- FWCI
- 11.47
- Type
- journal article
- Language
- en
- Open access
- green
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- Ni, Z., Zhong, H., Jiang, X., Quhe, R., Luo, G., Wang, Y., Ye, M., Yang, J., Shi, J., & Lu, J. (2014). Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors. Nanoscale. https://doi.org/10.1039/c4nr00028e
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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