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CrXTe3(X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors

Li, Xingxing, Yang, Jinlong·2014·Journal of Materials Chemistry C

Abstract

Two-dimensional (2D) ferromagnetic semiconductors hold a great potential for nano-electronic and spintronic devices. Nevertheless, their experimental realization remains a big challenge. Through first-principles calculations, we here demonstrate the possibility of realizing 2D ferromagnetic semiconductors simply by exfoliating layered crystals of CrXTe3 (X = Si, Ge). The exfoliation of CrXTe3 is feasible due to its small cleavage energy, and CrXTe3 nanosheets can form free-standing membranes. Interestingly, upon exfoliation, the ferromagnetism and semiconducting character are well preserved from bulk to the nanosheet form. Long-range ferromagnetic order with a magnetization of 3 μB per Cr atom is confirmed in 2D CrXTe3 from classical Heisenberg model Monte Carlo simulations. Both bulk and 2D CrXTe3 are indirect-gap semiconductors with their valence and conduction bands fully spin-polarized in the same direction, which is promising for spin-polarized carrier injection and detection. We further demonstrate the tunability and enrichment of the properties of CrXTe3 nanosheets via external operations. Under moderate tensile strain, the 2D ferromagnetism can be largely enhanced. By pure electron doping or adsorbing nucleophilic molecules, CrXTe3 nanosheets become 2D half metals.

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Metadata

Authors
Li, X., & Yang, J.
Venue
Journal of Materials Chemistry C
Published
2014-07-04
Volume
2
Issue
34
Pages
7071
ISSN
  • 2050-7526 (ISSN-L)
  • 2050-7534
OpenAlex
W2121608604
Cited by
381
References
29
FWCI
8.04
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: CrXTe3(X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors. https://app.cochat.ai/papers/10.1039/c4tc01193g
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Li, X., & Yang, J. (2014). CrXTe3(X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors. Journal of Materials Chemistry C. https://doi.org/10.1039/c4tc01193g

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