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Cited by 205

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Defect trapping states and charge carrier recombination in organic–inorganic halide perovskites

Wen, Xiaoming, Feng, Yu, Huang, Shujuan, Huang, Fuzhi, Cheng, Yi-Bing, Green, Martin, Ho-Baillie, Anita·2016·Journal of Materials Chemistry C

Abstract

The defect density and relaxation rate in organic–inorganic perovskites dominate the carrier recombination dynamics and thus PL intensity exhibits super-linear increase with increasing excitation.

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Crossref · 10.1039/c5tc03109e

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Metadata

Authors
Wen, X., Feng, Y., Huang, S., Huang, F., Cheng, Y.-B., Green, M., & Ho-Baillie, A.
Venue
Journal of Materials Chemistry C
Published
2016
Volume
4
Issue
4
Pages
793-800
ISSN
  • 2050-7526 (ISSN-L)
  • 2050-7534
OpenAlex
W2214336394
Cited by
205
References
3
FWCI
10.10
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Defect trapping states and charge carrier recombination in organic–inorganic halide perovskites. https://app.cochat.ai/papers/10.1039/c5tc03109e
The paper
Wen, X., Feng, Y., Huang, S., Huang, F., Cheng, Y.-B., Green, M., & Ho-Baillie, A. (2016). Defect trapping states and charge carrier recombination in organic–inorganic halide perovskites. Journal of Materials Chemistry C. https://doi.org/10.1039/c5tc03109e

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.