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Band-structure engineering for low-threshold high-efficiency semiconductor lasers
Abstract
It is shown that by using a strained-layer superlattice to form the active region of a quantum-well laser the threshold current can be reduced and Auger recombination and inter-valence band absorption can be effectively eliminated. The band-structure requirements are discussed generally and might be achieved by alternative methods.
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Cited by
System-on-Chip Photonic Integrated Circuits
Kish, F., Lal, V., Evans, P., Corzine, S. W., Ziari, M., Butrie, T., Reffle, M., Tsai, H.-S., Dentai, A., Pleumeekers, J., et al. (2018) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2017.2717863 · Cited by 168
Metadata
- Authors
- Adams, A. R.
- Venue
- Electronics Letters
- Published
- 1986-02-27
- Volume
- 22
- Issue
- 5
- Pages
- 249-250
- ISSN
- 0013-5194 (ISSN-L)
- 1350-911X
- OpenAlex
- W2081213843
- Cited by
- 574
- References
- 0
- FWCI
- 7.74
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Band-structure engineering for low-threshold high-efficiency semiconductor lasers. https://app.cochat.ai/papers/10.1049/el:19860171
- The paper
- Adams, A. R. (1986). Band-structure engineering for low-threshold high-efficiency semiconductor lasers. Electronics Letters. https://doi.org/10.1049/el%3A19860171
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
